日本液晶学会討論会講演予稿集
Online ISSN : 2432-5988
Print ISSN : 1880-3490
ISSN-L : 1880-3490
2024年日本液晶学会討論会
セッションID: 2CO2
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液晶性を活用した電荷移動錯体薄膜の形成とそのNチャネルトランジスタ応用
高丸 俊半那 純一*飯野 裕明
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Charge-transfer complexes formed by donor and acceptor molecules are expected to be applied to N-channel organic transistors. In this study, we have proposed a new method of preparing charge-transfer complex thin films by stacking donor and acceptor molecules, thermally annealing them, and diffusing acceptor molecules into the donor thin film. Benzothienobenzothiophene derivatives were used as donor molecules and tetracyanoquinodimethane derivatives as acceptor molecules, and the stacked structures were formed and thermally annealed. The crystal structure of the thin film showed that a charge-transfer complex thin film was formed, and N-channel transistor operation was also realized.

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