Activation Energy of Silicon Dioxide Nitridation by Nitrogen Ion Implantation

Abstract

The nitridation mechanism of the gate silicon dioxide by nitrogen ion implantation was investigated. In nitridation of the gate oxide, the activation energies of the nitrogen concentration are estimated 4.05 eV and 3.97 eV at the interfaces between the polysilicon gate and the gate oxide, and between the gate oxide and the silicon substrate, respectively. Nitridation of the gate oxide proceeds while breaking Si-O bond and forming Si-N bond. At 1100°C RTA for 30 seconds, there is not a difference in gate depletion whether with nitrogen ion implantation or without it.