Influence of the Gas Supply on the Elimination of Impurities and Surface Morphology of δ-Bi₂O₃ Thin Film under Atmospheric Pressure by Means of Halide CVD on C-Sapphire

Abstract

This report describes that the influence of the gas supply on the decrease of impurities and surface morphology of δ-Bi₂O₃ thin film by means of chemical vapor deposition under atmospheric pressure using BiI₃ and O₂ gas as starting materials. X-ray photoelectron spectroscopy and Energy dispersive X-ray spectrometer analyses revealed the remarkable decrease of impurities from the deposited film when put close to 60 mm against the O₂ gas line. By changing growth position, the incorporation of the iodine was completely suppressed. Obtained iodine-free δ-Bi₂O₃ thin film was not flat than that of the previous report, but also had a rather irregular shape and the average grain size was a few micrometers.