AgInS₂ Thin Films Prepared by Vacuum Evaporation for Photovoltaic Devices

Abstract

AgInS₂ thin films are prepared by vacuum evaporation from two commercially available binary compounds (Ag₂S, In₂S₃). The prepared thin films are characterized for their structural and optical properties. Good quality films are prepared at a mixing ratio of Ag₂S: In₂S₃ = 1: 1.5, which is suggested as a candidate for the window layer of a CuInS₂ solar cell.