Characteristics of Thin-Film Transistors Based on 2,8-Disubstituted Chrysene Derivatives with Polymer-Treated SiO2 Dielectric Layers

Yoshihito KUNUGI; Hikaru HOSHINO; Hiroyuki OTSUKI; Kazuo OKAMOTO

doi:10.5796/electrochemistry.81.402

Notes

Characteristics of Thin-Film Transistors Based on 2,8-Disubstituted Chrysene Derivatives with Polymer-Treated SiO₂ Dielectric Layers

Yoshihito KUNUGI, Hikaru HOSHINO, Hiroyuki OTSUKI, Kazuo OKAMOTO

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Keywords: Organic Field-Effect Transistor, Polymer-Treated Dielectric Layer, Chrysene Derivatives

JOURNAL FREE ACCESS

2013 Volume 81 Issue 5 Pages 402-404

DOI https://doi.org/10.5796/electrochemistry.81.402

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Abstract

We investigated the characteristics of organic thin-film transistors based on 2,8-disubstituted chrysene derivatives with a polymer treated SiO₂ dielectric layer to examine the effect of polymer coating. Field-effect characteristics were strongly influenced by the applied polymer insulators, and the best field-effect mobility (2.8 cm² V⁻¹ s⁻¹) was obtained for the CYTOP-treated device incorporating 2,8-diphenyl chrysene.

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