抄録
Silicon oxide (SiOx:x=1∼2) layer was deposited on the biaxially oriented nylon 6 films in a vacuum evaporator by using the mixtures of Si and SiO2 as evaporation sources instead of the expensive SiO. The evaporation source consisting of Si/SiO2=1/2(wt/wt) gave a highest evaporation efficiency and formed a most uniform SiOx deposited layer on the nylon 6 film. Further the SiOx vacuum deposition was continuously carried out on the running nylon film by using the mixtures of Si and SiO2 as evaporation sources. It was found that the thickness of the silicon oxide layer on the nylon film and the water vapor permeation rate are strongly related to the running velocity of the nylon film and the applied electric current to the heater. Although permeation rates of the water vapor through the SiO deposited nylon films were fairly high just after the deposition, especially when the deposited layer was thin, they then decreased to lower equilibrium values. Deposition of SiOx layer on the nylon film decreased the transmittance of the light in an ultra-violet region. We found that the silicon oxide deposited nylon 6 films with a high transparency and a high barrier to the water vapor can be obtained by using the mixtures of Si and SiO2 as evaporation sources instead of SiO.
