金属セレンの不純物に関する研究特に整流作用との関連性について

抄録

For the study of rectifying action of metalllic selenium, the author studied on the relations between minor impurities contained in selenium and crystal texture affected by temperature conditions.
Minor impurities added in selenium increase the electro-conductivity of selenium, and embody various nature as the semiconductors. And temperature conditions urge the occurrence of kernel and growth of hexagonal crystal and production of blocking layer. These are great factors that control the rectifying action, and have changed the forward current and reverse voltage remarkably.
Rectifying phenomena may be occurred by actions of positive hole for the potential wall, and these are derived from high resistance of the blocking layer producted on the selenium surface. Moreover, they may be considered to rectifying action for point contact with crystal growth surface and cathode metals.