REDUCTION IN CONNECTING RESISTIVITY OF INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS

Toshiyuki Sameshima; Kosuke Oshinari; Gen Kojitani; Maui Hino; Taichi Watanabe; Masaki Kondo; Mamiko Yagi; Masahiko Hasumi; Wakana Kubo; Jun-ichi Shirakashi; Mohamed Amara

doi:10.24752/gre.1.0_53

Japan council for Renewable Energy(2018)

DOI https://doi.org/10.24752/gre.1.0_53

会議情報

主催: Japan council for Renewable Energy(2018)

会議名: Grand Renewable Energy 2018

開催日: 2018/06/17 - 2018/06/22

REDUCTION IN CONNECTING RESISTIVITY OF INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS

*Toshiyuki Sameshima, Kosuke Oshinari, Gen Kojitani, Maui Hino, Taichi Watanabe, Masaki Kondo, Mamiko Yagi, Masahiko Hasumi, Wakana Kubo, Jun-ichi Shirakashi, Mohamed Amara

著者情報

キーワード: multi-junction solar cells, mechanical stacking, connecting resistivity, surface roughness, indium-tin-oxide

会議録・要旨集フリー

p. 53-

詳細

抄録

Reduction of connecting resistivity at the intermediate region for the mechanically stacked multi-junction solar cells is discussed. The top and bottom silicon substrates are bonded using an epoxy-type adhesive dispersed with transparent and conductive indium-tin-oxide (ITO) particles. Forming the roughness on the bonding surfaces of the substrates by SF6/Ar plasma irradiation well decreased the connecting resistivity of the stacked samples. The roughness improves electrical contact between ITO particles and substrates. A low connecting resistivity of 0.12 omega cm2 was achieved for the stacked sample with 39-nm-surface roughness formed by the plasma treatment for 40 min.

責任著者(Corresponding author)

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