抄録
The plasma enhanced chemical vapor deposition (PECVD) was combined with in situ deposition of Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Sn NPs) on the surface of hydrogenated silicon thin films. Formation of Sn NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Both processes were applied in situ to avoid oxidation and were repeatedly alternated to realize deposition of silicon thin films with embedded Sn NPs. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM), electron diffraction spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The photothermal deflection spectroscopy (PSD) was used for optical measurement of the absorption coefficient spectra that is higher than in the case of thin films without NPs. PIN diode structures with and without the embedded Sn NPs were characterized of I-V characteristics.
