Cu-N薄膜の電気特性に及ぼす水素注入の効果

抄録

Copper Nitride(Cu-N) thin films were prepared by reactive r.f. sputtering. With controlling the content of nitrogen gas, the electrical and optical properties of Cu-N thin films were changed. Stoichiometric Cu₃N thin films were found to be formed at 40% nitrogen gas because of the highest electrical resistivity and the largest optical band gap energy of all samples. Hydrogen ion implantation treatment was done in order to investigate the effect of hydrogen in Cu-N thin films on the electrical properties such as electrical resistivity and carrier density. After the treatments, the electrical resistivity of stoichiometric Cu₃N thin film was drastically decreased as the carrier density was increased.