抄録
To apply zinc oxide (ZnO) to a transparent electrode, hydrogen treated zinc oxide thin films were prepared that a pure ZnO thin films were deposited on glass substrates by off-axis rf magnetron sputtering and then the films were annealed in hydrogen gas. The ZnO thin films were deposited at substrate temperature Ts from R.T. to 300[e]. ZnO films deposited at substrate temperature 300e had many orientation grains. The electrical resistivity of the ZnO thin films degreased from 1.29×10'[Ωcm] to 1.46×10*+[Ωcm] by annealed at 300e in hydrogen gas. The c-axis lengths, energy gaps and optical transmittances of ZnO films decreased by annealed in hydrogen gas. Next, ZnO thin films were deposited at a substrate temperature Ts=R.T., and then the ZnO films were annealed at temperatures of from 100e to 300[e]. The pure ZnO films and hydrogen annealed ZnO films showed almost same (0001) single phase orientation. The electrical resistivity of the ZnO films degreased from 1.22×10,[Ωcm] to 4.74×10*+[Ωcm] by annealed at 400[e] in hydrogen gas. C-axis lengths of the hydrogen treated ZnO films neared single crystal’s values with increasing temperatures of annealing process. There was no apparent change of energy gaps of ZnO films annealed at various temperature. Optical transmittances of these ZnO films showed almost 80[%].
