IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
Letter
Influence of N2 Gas Pressure on a Nitrogen Ion Beam Etching of PMMA
Kozo Taguchi, Takeshi Ina, Masahiro Ikeda
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Keywords: polymer, dry etching, ion beam, N2 gas, N2 radical
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2003 Volume 123 Issue 2 Pages 389-390

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Abstract
The influence of N2 gas pressure on a Nitrogen ion beam etching of a polymethylmethacrylate(PMMA) was investigated in detail in order to discuss the dry etching mechanism of polymer. From these experimental results, it was found that N2 gas pressure was a critical parameter for polymer dry etching.
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© 2003 by the Institute of Electrical Engineers of Japan
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