Compound Semiconductor Materials for Microwave Devises

Abstract

Mass production technology and new developments in Compound Semiconductor material for Microwave devices are here described. Semi-insulating GaAs was used for Microwave devices from the 1980s. Progress of Epi-taxial technology has enabled higher performance of these devices. Epi-wafers for HEMTs and HBTs are grown by MOVPE and MBE in mass production. Controllability of the growth and improvement of through-put have been carried out in both methods. Quality improvement of conventional technology is still important on a real stage for the next generation devices. The new materials, such as Metamorphic Wafers, InP related material and GaN-HEMT have been developed and are showing high performance. Compound Semiconductors will contribute significantly to the future of Microwave devices.