2005 Volume 125 Issue 2 Pages 206-211
We report high-power technologies in 0.8μm Al-free InGaAsP/InGaP/AlGaAs laser diodes. To realize the high-power operation, the improvement of catastrophic optical mirror damage (COMD) power density level is required. In addition to the use of low surface recombination velocity of Al-free materials, optimization of waveguide thickness in broad waveguide strucuture with tensile-strained barriers and current blocking structure near facets has lead to high COMD power density level. Highly stable operation of Al-free laser diodes with these structures has been obtained over 2500 hours at 2W from a stripe width of 50μm. Applications of high power laser diodes are also described.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan