Abstract
The thermal conditions of high power 660-nm laser diodes (LDs) which kink phenomena in P-I curves occur are investigated. It was clearly revealed that the kink occurs when temperature in the stripe portion of LD rise to a certain value. The kink power of newly developed LD, based on this result, can be increased as high as 250 mW at 80°C under pulse operation. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. It is promising for the high-speed (16x) recordable DVD systems.