IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
Special Issue Review
Precision Analysis of Electron Beam Lithography
Masatoshi Kotera
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2006 Volume 126 Issue 6 Pages 683-689

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Abstract

The precision of electron beam lithography is analyzed using simulations of electron beam behavior in an electron optics, electron scattering behavior in a resist film on Si wafer, dissolution behavior of resist surface irradiated in the development process. Point spread functions because of the Coulomb repulsion of electrons in the optics, and scattering nature in the material are obtained. The placement accuracy is also determined by the analysis. This kind of simulations is so important that it should be continually improved to predict the precision of up-coming technologies in nanometer scale.

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© 2006 by the Institute of Electrical Engineers of Japan
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