2006 Volume 126 Issue 6 Pages 690-695
Nanoscale transistors are discussed in ballistic transport regime. Mechanism of operation as well as characteristics of the ballistic MOFET are analyzed in comparison to experimental devices. Carbon nanotube FETs are introduced briefly. A limitation to CMOS circuit operation due to thermal noise is also discussed.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan