IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
Special Issue Review
Prospects of Nanometer Scale CMOS Devices
Kenji Natori
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2006 Volume 126 Issue 6 Pages 690-695

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Abstract

Nanoscale transistors are discussed in ballistic transport regime. Mechanism of operation as well as characteristics of the ballistic MOFET are analyzed in comparison to experimental devices. Carbon nanotube FETs are introduced briefly. A limitation to CMOS circuit operation due to thermal noise is also discussed.

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© 2006 by the Institute of Electrical Engineers of Japan
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