IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Thermal degradation analysis of deuterium-ion-implanted V25Cr40Ti35 using synchrotron radiation photoelectron spectroscopy
Mayumi TodeJames R. HarriesYuden TeraokaAkitaka Yoshigoe
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2010 Volume 130 Issue 10 Pages 1819-1820

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Abstract
The thermal degradation of a native oxide layer on the hydrogen storage alloy V25Cr40Ti35 and the thermal desorption property of deuterium molecules were studied by synchrotron radiation soft X-ray photoelectron spectroscopy and thermal desorption mass spectrometry. Photoelectron spectra of O-1s, C-1s, V-2p, Cr-2p, and Ti-2p were observed for an as-received sample and a deuterium-ion-implanted one. Although the oxide layer changed dramatically by thermal annealing between 373 K and 473 K for the un-implanted sample, the change of the deuterium-ion-implanted sample was lying between 473 K and 573 K corresponding to D2 desorption. The implantation of deuterium resulted in the stabilization of the surface oxide layer by approximately 100 deg.
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© 2010 by the Institute of Electrical Engineers of Japan
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