2010 Volume 130 Issue 6 Pages 939-943
Insulated gate bipolar transistors (IGBTs) are used as switching devices for inverters of hybrid electric vehicles. IGBTs require very high reliability against device destruction. The strong dependence of short-circuit capability on temperature was theoretically investigated for the first time using a heat conduction equation. The model showed that the temperature-dependent factor for short-circuit capability was consistent with the empirical evidence.