IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Theoretical Analysis on Temperature Dependency of Short-Circuit Capability
Tomoyuki ShojiJun SaitoMasayasu Ishiko
Author information
JOURNALS RESTRICTED ACCESS

2010 Volume 130 Issue 6 Pages 939-943

Details
Abstract

Insulated gate bipolar transistors (IGBTs) are used as switching devices for inverters of hybrid electric vehicles. IGBTs require very high reliability against device destruction. The strong dependence of short-circuit capability on temperature was theoretically investigated for the first time using a heat conduction equation. The model showed that the temperature-dependent factor for short-circuit capability was consistent with the empirical evidence.

Information related to the author
© 2010 by the Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top