IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Analysis of Surface Defects on the Reverse Characteristics of 4H-SiC JBS Diode
Takashi KatsunoYukihiko WatanabeHirokazu FujiwaraMasaki KonishiTakeo YamamotoTakeshi EndoMasayasu Ishiko
Author information
Keywords: SiC, diode, surface defect
JOURNALS RESTRICTED ACCESS

2010 Volume 130 Issue 6 Pages 944-950

Details
Abstract

The good relations between the reverse characteristics of 4H-SiC JBS diodes and the surface defects were obtained. The reverse characteristics of 4H-SiC JBS diodes were categorized in three groups as follows: (A) low blocking voltage, (B) high leakage current and (C) low leakage current. The groups of (A) and (B) were caused by the existences of the micropipe and small particles, and the carrot-like defects on the SiC surfaces, respectively. In group (C), there was no defect on the surfaces observed by the optical microscope. The structure of carrot-like defect was analyzed by the cathode-luminescence and TEM.

Information related to the author
© 2010 by the Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top