2010 Volume 130 Issue 6 Pages 951-954
This paper describes the next generation 600V trench-gate IGBT utilizing the Micro-P structure to realize low noise and low power dissipation. We have achieved “better turn-on di/dt controllability”, “oscillation free turn-off” and “improved Von-Eoff trade-off relationship” in the 600V IGBTs. In a typical inverter operation, the new chip has realized 10% lower power dissipation and the temperature difference between junction and case (dTj-c) can be reduced by 2.5deg. C.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan