Low-Voltage PTAT Voltage Reference with Area Efficiency Improved

Abstract

The structure of Proportional-to-Absolute-Temperature (PTAT) voltage reference with MOSFETs operating in the subthreshold region is proposed. It is based on conventional one the equivalent operation of which is being achieved from the viewpoint of relations between voltages and currents of MOSFETs. The derived structure relaxes the occupied area. Experimental results of a PTAT voltage reference implemented on a chip as an example are shown.