High Power InGaN-LED on m-plane GaN Substrate

Abstract

Growing demands for reduction of energy consumption and environmental impact are rapidly leading to the spread of solid state LED lighting with low power consumption and high reliability. To meet these demands, we are developing high efficiency and high power LED on GaN substrate. High optical output power of 1.23W at 1A was obtained by using the technologies which are epitaxial growth of high quality m-plane InGaN on GaN substrate and low contact resistance electrode. The m-plane InGaN-LED realized the quite small external-efficiency droop of about 20% up to 500A/cm², while large droop seriously occurs in polar c-plane (0001) InGaN LED.