IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
High-Power True Green Laser Diodes on Semipolar {2021} GaN Substrates
Koji KatayamaNobuhiro SagaMasaki UenoTakatoshi IkegamiTakao Nakamura
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2013 Volume 133 Issue 8 Pages 1449-1453

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Abstract
InGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100mW in the spectral region beyond 530nm is demonstrated. Wall plug efficiencies as high as 7.0-8.9% are realized in the wavelength range of 525-532nm, which exceed those reported for c-plane LDs. The lifetime at a case temperature of 55°C was estimated to be over 5000 hours for an optical output power of 50mW. These results suggest that InGaN green LDs on the {2021} plane are better suited as light sources for applications requiring wavelengths over 525nm.
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© 2013 by the Institute of Electrical Engineers of Japan
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