SiC-MOSFET Converter for Switched Reluctance Motors

Abstract

This paper presents 10 kW SiC-MOSFET converter for driving SRMs. We proposed gate driver which can reduce switching losses and switching delay at the same time. The SRM converter with the proposed gate driver has higher efficient drive capability compared to silicon IGBT. Because of this high efficient drive advantage, we can apply higher switching frequency to reduce current ripple, or add more switching devices to improve converter performances. We improved current control characteristics with 80 kHz switching frequency, and also add some switching devices and boost capacitor to expand output torque range of SRMs.