IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Vertical Organic Light-Emitting Transistor Using Oriented Molecular Thin Film
Shin KobayashiHirohiko FukagawaKazuhiro KudoNoboru OhashiYasuyuki Watanabe
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2018 Volume 138 Issue 4 Pages 381-386

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Abstract

We proposed a novel organic light-emitting transistors (OLETs) named band conduction based vertical organic light emitting transistor (BCBVOLET). In BCBVOLET, an organic light-emitting diode (OLED) is formed on the vertical organic transistor. The vertical organic transistor we used are originally developed transistor called band conduction based organic transistor (BCBOT). BCBOT allows low-voltage, and high-current operation. As a result of using BCBVOLET, we succeeded to obtain maximum luminance of 600 cd/m2 at gate voltage of -2 V. ON / OFF ratio of current density is 103 at gate voltage of -2 V to 0 V.

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© 2018 by the Institute of Electrical Engineers of Japan
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