微分位相コントラストSTEMを用いたGaN/AlGaN/InGaNマルチヘテロ接合の局所電場観察

遠山 慧子; 関 岳人; 蟹谷 裕也; 冨谷 茂隆; 幾原 雄一; 柴田 直哉

doi:10.1541/ieejeiss.142.367

IEEJ Transactions on Electronics, Information and Systems

Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221

The Observation of Local Electric Fields in GaN/AlGaN/InGaN Multi-heterostructures by Differential Phase Contrast STEM

Satoko Toyama, Takehito Seki, Yuya Kanitani, Shigetaka Tomiya, Yuichi Ikuhara, Naoya Shibata

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Keywords: scanning transmission electron microscopy, GaN

JOURNAL RESTRICTED ACCESS

2022 Volume 142 Issue 3 Pages 367-372

DOI https://doi.org/10.1541/ieejeiss.142.367

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Abstract

The local electric field distributions inside specimens can be directly observed by differential-phase-contrast scanning transmission electron microscopy (DPC STEM). In this study, we applied DPC STEM to GaN/AlGaN/InGaN multi-heterostructures. We successfully visualized the differences in electrostatic potentials of GaN/AlGaN/InGaN.

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