2024 Volume 144 Issue 3 Pages 228-233
In this paper, a newly developed 3rd Gen. RC-IGBT is presented. To reduce the power loss and improve the heat dissipation of RC-IGBTs, we introduced four approaches, controlling Gate-capacitances, thin wafer technique, high-density diode arrangement, and low carrier injection anode and cathode. The superior performance of the 3rd Gen. RC-IGBT is very promising for the carbon neutral.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan