Development of β-Ga₂O₃ MOSSBD Featuring Ampere-Class Forward Current and Medium Breakdown Voltage

Abstract

We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) on a 12-μm-thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga₂O₃(001) substrate. The MOSSBDs, measuring 1.7×1.7 mm², exhibited a forward current of 2 A (70 A/cm²) at 2 V forward voltage and a leakage current of 2×10^-8 A/cm² at -1.2 kV reverse voltage (on/off current ratio of > 10⁹) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ·cm². These results indicate that the MOSSBD is promising for practical high-voltage (AC 400 V) power applications.