Impact of Scaling on Back-Gate-Controlled IGBT (BC-IGBT)

Abstract

Back-gate-controlled IGBT (BC-IGBT) which uses a manufacturable double side lithography is experimentally demonstrated. The impact of IGBT scaling on BC-IGBT is evaluated in detail. A back gate control (BC-) mode in scaled IGBT shows better performance improvement compared with the BC-mode in non-scaled IGBT. Superior performance of BC-IGBT by optimizing both front side and back side design has been realized. Back gate control with scaled IGBT will provide a new technological option for expanding the frequency/voltage range of Si power devices, and become an attractive candidate for next generation high performance IGBTs.