2024 Volume 144 Issue 3 Pages 240-244
In this work, we report a newly developed analysis method to investigate the mechanism of turn-on voltage tail of IGBT, aiming at the reduction of turn-on loss (Eon). This analysis method visualizes how gate-collector capacitance (CGC) increases by monitoring the potential change at the interface of the gate oxide and silicon around the gate trench during the turn-on process. It was found that, in the turn-on transient, initially, the collector-emitter voltage (VCE) decrease, and CGC increase drastically when the potential around the gate trench falls below the gate-emitter voltage (VGE) and that the sudden increase of CGC causes the turn-on voltage tail. Detailed TCAD analysis reveals that the electric potential around the gate trench is lowered by the dummy trench and causes the sudden increase of CGC. To verify that the dummy trench is origin of the turn-on voltage tail, full gate trench IGBT with no dummy trench is studied. In the full gate trench IGBT, neither sudden increase of CGC nor turn-on voltage tail are observed.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan