The transactions of the Institute of Electrical Engineers of Japan.A
Online ISSN : 1347-5533
Print ISSN : 0385-4205
Fabrication Method of Amorphous As-S Semiconductor Memory Device Doped with Ag and its Electrical Character-istics
Yooichi HiroseHaruo HiroseAkio Kunioka
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1981 Volume 101 Issue 6 Pages 332-338

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