Electron Trap Characterization of GaAs Grown by The Liquid Encapsulated Czochralski Method

The transactions of the Institute of Electrical Engineers of Japan.A

Online ISSN : 1347-5533
Print ISSN : 0385-4205

Electron Trap Characterization of GaAs Grown by The Liquid Encapsulated Czochralski Method

Tamotsu Hashizume, Shinji Hiramatsu, Isamu Todo, Toshihiko Tanaka, Hiroto Hagabuchi

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1987 Volume 107 Issue 11 Pages 522-528

DOI https://doi.org/10.1541/ieejfms1972.107.522

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