抄録
A 4H-SiC pin diode with improved termination named mesa JTE has been developed and a high blocking voltage of 6.2kV and a low VF of 4.7V at 100A/cm2 have been achieved. A developed diode has an excellent trade-off between the blocking voltage and on-state voltage superior to the trade-off limit of the commercialized Si pin diodes. By evaluation of forward characteristics, a developed diode has 5 to 10 times lower differential resistance than that of a commercialized 4.5kV Si diode.
