論文
6.2kV 高耐圧低損失 4H-SiC pinダイオードの静特性
2003 年 123 巻 6 号 p. 660-666
詳細
2003 年 123 巻 6 号 p. 660-666
A 4H-SiC pin diode with improved termination named mesa JTE has been developed and a high blocking voltage of 6.2kV and a low VF of 4.7V at 100A/cm2 have been achieved. A developed diode has an excellent trade-off between the blocking voltage and on-state voltage superior to the trade-off limit of the commercialized Si pin diodes. By evaluation of forward characteristics, a developed diode has 5 to 10 times lower differential resistance than that of a commercialized 4.5kV Si diode.
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