抄録
Impacts of drift-region thickness of the static induction rectifier on its electrical characteristics were investigated by semiconductor simulations. The decrease of the drift-region thickness, which changes the carrier distribution during the on-state from the pin-like distribution to the BSIT-like one, reduces the stored charge on the anode side. Therefore, as the acceptor dosage in the channel region is decreased, the rectifier having the thin drift region operates with a high switching speed and low forward voltage drop. An oscillation phenomenon in a voltage waveform during the recovery process is related to the drift region thickness.
