電気学会論文誌D(産業応用部門誌)
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
論文
5kV級4H-SiC SEJFETのオン特性の温度依存性及びスイッチング特性
浅野 勝則林 利彦高山 大輔菅原 良孝Sei-Hyung RyuJohn W. Palmour
著者情報
ジャーナル フリー

2005 年 125 巻 2 号 p. 147-152

詳細
抄録
A normally-off type 5kV class 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation is realized at the temperature from RT to 600K. A very fast switching time of the 4H-SiC SEJFET are realized. The turn-on time at RT is 20ns and the turn-off time at RT is 47ns. In this SEJFET, temperature dependences of the output characteristics and transfer characteristics are evaluated. Its specific on-resistance has a large positive temperature dependence, and its transconductance has a large negative temperature dependence.
著者関連情報
© 電気学会 2005
前の記事 次の記事
feedback
Top