抄録
Analytical models of the pin diode in a small current operation are not known yet. This article presents a simple analytical model of the pin diode operation with its confirmation by a numerical simulation. At the onset, carriers recombinations are not included for the simplicity. The exact JF-VF characteristic (JF ∝exp(VF/kT)) could been induced only accounting the Boltzmann distribution of each carrier across the junctions and the diffusion current of each minority carrier in a p-anode or a n-cathode. On this new model, the modifications of hole-electron densities product (ne nh) across junctions, a rough estimation of the large operational current, its carrier distributions, and an effect of carrier recombination on the carrier distribution are plainly estimated and are also compared with the simulation results.
