4H-SiC pinダイオードの順方向電圧劣化特性と高耐圧少劣化(000-1)C面4H-SiC pinダイオード

抄録

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6kV and ΔV_F of 0.04V were achieved for a (000-1) C-face pin diode. A 8.3kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.