Paper
A Method for Measuring Voltage-Dependent Capacitance Using TDR System
2011 Volume 131 Issue 5 Pages 747-753
Details
2011 Volume 131 Issue 5 Pages 747-753
The measurement of circuit parasitic parameters and evaluation of equivalent circuit models are necessary for a noise analysis or a high-speed operation circuit design of power electronics circuits. Recently, time domain reflectmetry (TDR) has emerged as a technique for measuring circuit parameters. This paper proposes a TDR method for measuring the voltage-dependent capacitance of a power MOSFET. This method can be used to measure the output capacitance Coss of a MOSFET for any DC bias voltage. The Coss of a MOSFET with VDS=350 V was measured in an experiment, while the datasheet gives values of Coss only for V DS values in the range 35-100 V.
The transactions of the Institute of Electrical Engineers of Japan.C
The transactions of the Institute of Electrical Engineers of Japan.B
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan
