電気学会論文誌D(産業応用部門誌)
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
論文
高精度パワーデバイスモデルによるSiCインバータのEMI解析
前川 佐理津田 純一葛巻 淳彦松本 脩平餠川 宏久保田 寿夫
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2014 年 134 巻 4 号 p. 461-467

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In recent years, to reduce switching loss, the switching speed has been dramatically increased. The increase in EMI y the high time gradient may cause improper operation of neighbor devices. For the above reason, it is necessary to reduce the EMI by using noise filter. In order to estimate the EMI in the design phase before trial production, highly precise EMI analysis technology is required. Estimating the EMI for power electronics has been attempted by highly precise analytical modeling and modeling including parasitic components with electromagnetic-field analysis in recent years. In this study, Tri-phase 400Vrms inverter for system interconnections with SiC-JFET is analyzed. The frequency range is from 150kHz to 30MHz, as specified by CISPR11 Class A. The study results showed that the noise terminal voltage is analyzable with an error of ±10dB by highly precise modeling.
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