SiC-MOSFETを対象とした直流側寄生インダクタンスに起因するスイッチング損失の影響評価

抄録

Recently, high-speed switching circuits using SiC power devices have been developed for next-generation power electronics circuits and applied to actual traction systems in Japan. Stray inductances caused by DC capacitors, bus bars and power devices are one of the most critical parameters that influences over-voltage and switching loss. This paper presents an investigation into the influence of stray inductance on the switching performance of power devices. In particular, this paper focuses on the effects of stray inductance on both turn-on loss and turn-off loss, and can be estimated using the proposed impedance ratio method of the stray inductance. To verify the proposed procedure, experimental results are demonstrated using an all-SiC power module.