パワエレ用高性能SiC融合逆導通デバイスの開発

抄録

SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.