SiCSBDを多直列接続した超高耐圧ダイオードモジュールの電圧分担に関する一考察

抄録

High voltage (HV) DC power suppliers are widely studied to improve the efficiency and reduce the size. Cockcroft-Walton (CW) voltage multiplier is generally used in conventional HV power supply owing to its high step-up ratio, low voltage stress on components, and compactness. HV DC power supply can be miniaturized by driving the system at high frequency (HF). In this study, an HV SiC schottky barrier diode (SBD) module was developed for HF HV CW circuits, which consist of multiple SiC SBDs directly connected in series and molded in a module package. The switching behavior of the developed SiC SBD module is discussed from the viewpoint of voltage distribution among SBDs.