Power electronics systems have significantly contributed to energy saving by high power conversion efficiency. Some characteristics of power devices have played an important role. Recently, wide-bandgap power devices, such as gallium nitride (GaN) and Silicon carbide (SiC), have been developed for next-generation circuits, owing to their high breakdown field and mobility. GaN power devices can switch at higher speeds compared with SiC power devices.
In this paper, we present the results of the influence of PCB stray inductance on the switching performance of the cascode connected GaN power device in TO-247 package. The stray inductance is calculated from electromagnetic field analysis. Two half-bridge circuits which have different stray inductance are evaluated by switching test and boost-chopper with DCM control.
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