抄録
For pulsed power systems such as lasers and accelerators, semiconductor switches with their longer service life have been actively developed as replacements for thyratrons. The MOS-driven thyristors are suitable for pulsed power applications because they have the high-power handling and fast turn-on capabilities. The MOS Assisted Gate-triggered Thyristor (MAGT), especially designed for pulsed power, is a promising candidate in this field.
This paper presents the results of an investigation into the performance of MAGTs. Using a pulse forming network (PFN), the pulse switching characteristics and the dynamic resistance characteristics during the current flow were investigated. A maximum current density of 21.8kA/cm2 and di/dt of 106kA/ μs/cm2 with 1, 550 V anode voltage on a single shot basis were obtained. Furthermore, a life test with 109 shots at a high repetition rate showed no degradation in the observed characteristics. Based on these experimental results, a carrier flow model of MAGT during turn-on process was proposed and the turn-on mechanism was considered.
