プロトン照射による静電誘導(SI)サイリスタの性能改善

抄録

The turn-off time (t_gq), forward voltage drop (VTM) and the power dissipation at switching operation of static induction (SI) thyristor using a normally-off planer gate structure was improved by lifetime control using proton irradiation. In proton irradiation, defects form locally in silicon, and the depth of the defects distribution can be controlled by the energy of the proton beam.
It has been found that the performance trade-off between t_gq and VTM and the high temperature performance in the power dissipation of the SI thyristor depends on the depth of the defects formed by proton irradiation. If the defects were formed in the anode region then the power dissipation was nearly constant at from room temperature to 100°C.