シングルエンデッド部分共振電圧形ソフトスイッチングインバータにおけるIGBTとMCTの性能評価

抄録

A cost effective high-efficiency, simple, low noise voltage-source type single-ended quasi-resonant high frequency inverter using a single power semiconductor switching device and its modified circuit topologies are commonly applied for consumer induction heated rice cooker with a warmer function, cooking heater and microwave oven. This paper presents some comparative performance evaluations of each generation IGBT and MCT (MOS Controlled Thyristor) incorporated into the typical voltage-source quasi-resonant inverter operating under zero voltage soft switching transition mode. New generation IGBT has been improved for consumer power applications in order to reduce the conduction loss which is based on the lowered saturation voltage characteristics due to the latest IGBT. The comparative steady-state characteristics of some sample power-semiconductor switching devices of each generation IGBT are demonstrated on the basis of the simplest single-ended quasi-resonant inverter circuit operating under a condition of zero voltage soft switching commutation principle. In addition, the power losses and temperature performance analysis of the latest IGBT are discussed and evaluated as compared with previously-developed IGBTs. Finally, the further reduced saturation voltage and conduction loss characteristics of MCT which are more suitable for consumer utilizations are presented in comparison with the conventional IGBT.