パワーデバイス用Si結晶

The Journal of The Institute of Electrical Engineers of Japan

Online ISSN : 1881-4190
Print ISSN : 1340-5551
ISSN-L : 1340-5551

SPECIAL ISSUE on Crystal Engineering for Power Semiconductor Devices —Si, SiC, GaN, Diamond, Gallium Oxide—

Si Crystal for Power Devices

Hidekazu YAMAMOTO

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Keywords: Si, IGBT, FZ, 300 mm

JOURNAL FREE ACCESS

2017 Volume 137 Issue 10 Pages 675-676

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[in Japanese]

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