SPECIAL ISSUE on Crystal Engineering for Power Semiconductor Devices —Si, SiC, GaN, Diamond, Gallium Oxide—
Impact of the AlN Nucleation Layer on GaN grown on Silicon Substrate by MOCVD for Power—devices
Keywords:
MOCVD (Metal Organic Chemical Vapor Deposition),
AlGaN/GaN HEMT on Si substrate,
AlN nucleation layer
2017 Volume 137 Issue 10 Pages 681-684
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