Synthesis of Silicon Carbide by High Temperature Flame
1997 年 5 巻 1 号 p. 58-68
詳細
1997 年 5 巻 1 号 p. 58-68
An approach to the synthesis of silicon carbide (SiC) ultrafine (u. f.) particles using silica (SiO2) powders by high temperature flame was briefly introduced. Calculations including Gibbs free energy of different reaction systems showed the possibility of SiC formation. The SiO2 u. f. particles (5-10nm) could be formed from the Si2 powders (50-100μm) by high temperature CH4-O2 flame around 2500 K. β-SiC u. f. particles including reticular membrane could be synthesized by an electric furnace at about 2018 K through Si+CH4, SiO+CH4 and SiO2+CH4 reaction systems, respectively. The effects of H2, CO, CO2 and H2O on the SiC percentage of synthesized u. f. particles were tested.
